Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

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The nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD).The films were used in a silicon-based thin film solar cell with graded-dead absorption layer.

The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform Earl Grey Tea infrared absorption spectroscopy.The band gap of SiGe alloy can be adjusted between 0.8 and 1.

7 eV by varying the gas ratio.For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion Knife Care efficiency.An initial conversion efficiency of 5.

06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.